sod-723 plastic-encapsulate diodes cesd 3v3d7 esd protection diodes + description the cesd3 v3 d7 is designed to protect voltage sensitive components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in - cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z stand ? off voltage: 3.3 v ? 12 v z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) per human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limits unit iec61000 ? 4 ? 2(esd) air contact 30 30 kv esd voltage per human body model per machine model 16 400 kv v total power dissipation on fr-5 board (note 1) p d 100 mw thermal resistance junction ? to ? ambient r ja 1250 / w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage temperature range t j, t stg -55 ~ +150 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the reco mmended. operating conditions is no t implied. extended exposure to stresses above the recommended operating cond itions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. sod-723 http://www.luguang.cn mail:lge@luguang.cn
electrical characteristics (t a = 25c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c max. capacitance @v r =0 and f =1mhz electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t i pp (a) + v c (v) @max i pp + p pk + (w) c (pf) device* device marking max max min max ma max max max typ cesd3v3d7 e0 3.3 2.5 5.0 5. 9 1.0 10.4 11.9 113 80 CESD5V0D7 e2 5.0 1.0 6.2 7. 3 1.0 8.8 13.3 117 65 cesd12vd7 e3 12 1.0 13.5 15.6 1.0 5.4 23.7 128 30 *other voltages available upon request. +surge current waveform per figure 1. 2. v br is measured with a pulse test current i t at an ambient temperature of 25c. typical characteristics http://www.luguang.cn mail:lge@luguang.cn
http://www.luguang.cn mail:lge@luguang.cn
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